Products

DESCRIPTION

Basic Info

Model NO.	FW-CRYSTAL
Manufacturing Technology	Optoelectronic Semiconductor
Material	Compound Semiconductor
Type	N-type Semiconductor
Package	SMD
Application	Television
Brand	Finewin
Materials	Gallium Nitride
Thickness	3-4um or 20um
Size	2inch or 4inch
Transport Package	Box
Specification	2INCH
Trademark	FineWin
Origin	Jiaozuo City Henan Province
Production Capacity	1000 PCS/Month

Product Description

GaN Template Wafers
1. What is templates
We use the term "template" to describe our products as they are different to substrates. Specifically, a template is a composite or engineered substrate, where one or more layers are added to the original susbstrate.

2.Application

Blue and white LED for room lightings, displays and general use

GaN power switching devices

3.Product available

2" to 4" GaN-templates on FSS and PSS
Thick GaN-templates (t=3~20μm)
GaN-template with highly doped n-type layer (n=<1e19/cm³)
Ntype (undoped), Ntype (Si doped), and Ptype(Mg doped) templates are available
GaN Templates on both sapphire substres and Silicon substrates

4. Features

XRD-FWHM	002	102
3-4μm GaN/Sapphire	200-300	250-450

Dislocation density:3.5E+08 cm-2

 

5. Specification
2inch specification

Item	GaN-FS-C-U-C50	GaN-FS-C-N-C50	GaN-FS-C-SI-C50
Dimensions	Ф 50.8 mm ± 1 mm
Thickness	350 ± 25 µm
Useable Surface Area	> 90%
Orientation	C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat	(1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat	(11-20) ± 3°, 8.0 ± 1.0 mm
Total Thickness Variation	≤ 15 µm
BOW	≤ 20 µm
Conduction Type	N-type (Undoped)	N-type (Ge-doped)	Semi-Insulating (Fe-doped)
Resistivity(300K)	< 0.5 Ω·cm	< 0.05 Ω·cm	>106 Ω·cm
Dislocation Density	1~9x105 cm-2	5x105 cm-2 ~3x106 cm-2	1~9x105 cm-2
	1~3x106 cm-2		1~3x106 cm-2
Polishing	Front Surface: Ra < 0.2 nm. Epi-ready polished Back Surface: Fine ground
Package	Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

4inch specification

Item	GaN-T-C-U-C100	GaN-T-C-N-C100
Dimensions	Ф 100 mm ± 0.1 mm
Thickness	4 µm, 20 µm
Orientation	C-plane(0001) ± 0.5°
Conduction Type	N-type (Undoped)	N-type (Si-doped)
Resistivity 300K	< 0.5 Ω·cm	< 0.05 Ω·cm
Carrier Concentration	< 5x1017 cm-3	> 1x1018 cm-3
Mobility	~ 300cm2/V·s	~ 200 cm2/V·s
Dislocation Density	Less than 5x108 cm-2
Substrate structure	GaN on Sapphire(Standard: SSP Option: DSP)
Useable Surface Area	> 90%
Package	Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

6. Product pictures