Electro-Optical Devices, Multiplier and Acousto-Optic Devices-Litao3 Crystal

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Electro-Optical Devices, Multiplier and Acousto-Optic Devices-Litao3 Crystal

Electro-Optical Devices, Multiplier and Acousto-Optic Devices-Litao3 Crystal

Innovation point : Through the crystal growth machine's modification in rotating and lifting system, the stability of cr

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DESCRIPTION

Basic Info
Model NO. FWLN
After-sales Service Aftersales Service
Warranty 1 Year
Shipping FedEx, DHL, UPS...
Transport Package Individual Packaging Or25PCS Packaging
Specification 2-7 inch
Trademark FineWin
Origin Jiaozuo Henan
Production Capacity 25, 000PCS/Month
Product Description
LiTaO3 crystal is also widely used E-O crystal, due to its optical, NLO and E-O poperties similar to those of LiNbO3 crystal, but with higher damage threshold (> 500 MW/cm2 for ns pulsed). Main properties include:
  • Transparent Range: 0.4 - 5.0 μm; E-O Coefficient: r33=30.4;
  • Refractive Indices: no=2.176, ne=2.180 @ 633 nm.
Maximum LiTaO3 SAW wafer size we can offer is 6 inch in diameter.

Red Optronics provide LiTaO3 in as-cut boules, wafers or slices. Our production capabilities include:

Boules:
  • Diameter: f40mm ~ 102mm
  • Length: 50mm ~ 150mm
  • Orientation: X, Z, 36°Y, 42°Y, 128°Y
  • Polish: 0.016mm
Wafers:
  • Diameter: f40mm ~ 102mm
  • Length: 0.2~1.2mm
  • Orientation: X, Z, 36°Y, 42°Y, 128°Ys
  • Flatness:
    <10mm for f40 ~ 65mm
    <15mm for f65 ~ 102mm
  • Bow:
    <20mm for f40~ 65 mm,
    <40mm for f65 ~102mm
Slices:
Size: 100x45x1.5mm ~ 120x40x2mm

 

Boule Specifications
Typical Diameterφ3"±2mmφ4"±2mm
Typical Length≤120mm≤100mm
Typical Orientation36°Y,42°Y,
Wafer Specifications
Diameterφ3"±2mm,φ4"±2mm
Thickness0.3~1mm
Orientation36°Y,42°Y
Reference Flat OrientationX
Ref.Flat Width22±2
Front Side Polishing0.25~0.016μm
Back Side Lapping10~15μm
Flatness (μm)≤20
Bow (μm)≤30
Notes:
To inquire or order LiTaO3 crystals, please provide specifications as detailed in above.
Physical and Optical Properties
Crystal Structure: Trigonal, space group R3c,Point group 3m
Cell Parameters: a=5.154A,c=13.781A
Melting point:1650°C
Curie Temperature: 607°C
Mohs hardness: 5.5
Density: 7.46 g/cm3
Dielectric Constant: ξ11/ξ0 51.7
ξ33/ξ0 44.5
Elastic Stiffness Coefficient: CE11 2.33(X 1011 N/m2)
CE33 2.77(X 1011 N/m2)
Piezoelectric Strain Constant: d22 2.4(X 10-11 C/N)
d33 0.8(X 10-11 C/N)
Transmission range: 400-4500nm
Electro-optical coefficients: r33 30.4pm/V
Refractive index at 632.8nm:no=2.176, ne=2.180 Aperture
SAW Properties
Cut Type νs(m/s) κ2s(%) TCV(10-6/°C) TCD(10-6/°C)
X-112°Y 3295 0.75 -16.50 22.3
Y-Z 3230 0.66

Innovation point: Through the crystal growth machine's modification in rotating and lifting system, the stability of crystal growth interface and growth rate become higher. Also the defects caused by the influence of crystal rotating and rising disturbance on the solid-liquid interface during the crystal growth process are reduced. we create simulation of crystal growth system and can design crystal shape. The computer chip control the changing of crystal shape according to crystal growth status, through the processing of precision sensor signals. The ultra low gradient interface growth temperature field we self-designed make the quality of optical crystals much better.
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Photos:

Electro-Optical Devices, Multiplier and Acousto-Optic Devices-Litao3 Crystal


SAW Level LT ingot

Electro-Optical Devices, Multiplier and Acousto-Optic Devices-Litao3 Crystal


Optical LT wafers

Electro-Optical Devices, Multiplier and Acousto-Optic Devices-Litao3 Crystal

Electro-Optical Devices, Multiplier and Acousto-Optic Devices-Litao3 Crystal


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